1.2 kV half bridge gate driver

The IX2120B is a high voltage, half-bridge gate driver integrated circuit designed to drive discrete power MOSFETs and IGBTs that operate up to 1200 V. The IX2120 is configured with independent high-side and low-side referenced output channels, both of which can source and sink 2 A.

High voltage level-shift circuitry allows low voltage logic signals to drive IGBTs in a high side configuration operating up to 1200 V. The IX2120B’s 1400 V absolute maximum rating provides additional margin for high voltage applications.

“This product complements the full selection of power driver ICs that we have developed and introduced to the power management market in the last 3 years. It is designed and produced in our internal wafer fabrication facility on the proven advanced SOI process,” commented Dr. Nathan Zommer, CEO and CTO of IXYS Corporation.

With the IXYS power MOSFET and IGBT products, the ICD drivers offer IXYS’ customers the whole system solution in a one-stop shop, which includes the Zilog line of MCUs.