100-A dual SiC MOSFET modules operate from –40° to 200°C

100-A dual SiC MOSFET modules operate from –40° to 200°C

The QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules operate at –40° to 200°C, well beyond those possible with silicon IGBT-based modules. The modules are constructed in half-bridge configuration and feature 100 A of SiC MOSFET per switch with two switches per model. When compared to a silicon IGBT module of equal rating (operating at a junction temperature of 150°C) the SiC MOSFET-based module has 38% lower conduction losses and 60% lower switching losses for a total power-loss reduction of 54% when operated at 20 kHz.

Both style MOSFETs feature all silicon carbide Schottky diodes for reverse recovery. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Designed for power systems requiring both low conduction and switching losses, these all SiC MOSFET devices enhance applications that require high efficiency, high frequency and/or high temperature. Applications include forklifts, off-road electric vehicles, and power supplies. (QJD1210006 sample pricing $9,000 ea; QJD1210007 sample pricing at $9,200 ea. available now.)

Powerex , Youngwood , PA
Kelly Bandieramonte 800-451-1415

http://www.pwrx.com