1200-V IGBTs reduce switching losses

The IRG7Pxxxxx family of 1,200-V insulated gate bipolar transistors (IGBTs) suit induction heating, uninterruptible power supplies, solar, and welding applications. The devices use thin wafer field-stop trench technology that reduces switching and conduction losses to deliver high power density and efficiency at high frequencies.

The IGBTs support from 20 to 50-A in packaged devices and up to 150-A for die products. The devices are available with or without an internal ultra-fast soft-recovery diode. Die products are also available with solderable front metal for improved thermal performance. ($3.00 ea/10,000 available now.)

By Paul O’Shea

International Rectifier , El Segundo , CA
Sales 310-252-7105
www.irf.com