SemiQ has expanded its portfolio of silicon carbide (SiC) power devices with the launch of its second generation SiC power switch. The new GP2T080A120U 1200-V, 80-mΩ SiC MOSFET joins the existing family of 650-V, 1200-V, and 1700-V SiC rectifiers.
By providing the best compromise between conduction and switching losses, the SiC MOSFET targets a wide range of applications, said SemiQ. As shown in the chart below, the SiC MOSFET maintains its efficiency advantage over a full range of frequencies compared to competitive products, providing more flexibility over a wider range of applications, added the company. The operating temperature range of the GP2T080A120U is -55°C to 175°C.
(Source: SemiQ)
Click for a larger image. (Source: SemiQ)
SiC MOSFETs switch faster with lower losses compared to silicon IGBTs, said SemiQ, enabling reduced size, weight, and cooling requirements at the system level. Operating reliably in extreme environments, the devices can be used in applications such as electric vehicle charging stations, switch-mode power supplies, solar inverters, motor drives, and high-voltage DC/DC converters.
The 1200-V, 80-mΩ SiC MOSFET is available now in a TO-247-3L package. This will be followed by a TO-247-4L package and a series of modules. Samples are in stock at SemiQ and are available through authorized distributors Digi-Key, Mouser Electronics, and Richardson Electronics.
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