Toshiba Corporation has developed 48-layer three dimensional stacked cell structure flash memory called BiCS, a 2-bit-per-cell 128-Gbit device. The leading-edge 48-layer stacking process enhances the write/erase endurance and boosts write speed. It is well suited for high capacity SSD applications.
Toshiba will support initial sampling and production of the 128-Gbit device from its Fab 5 at their Yokkaichi Operations in Japan. Mass production of 3D Flash memory will be from a new Fab 2 at Yokkaichi, now under construction to be completed in the first half of 2016. No further technical details are available.
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