130-nm SiGe BiCMOS process enables highest-performance wireless

130-nm SiGe BiCMOS process enables highest-performance wireless

Jazz Semiconductor (Newport Beach, CA), an independent wafer foundry focused primarily on specialty CMOS process technologies, recently introduced a 130-nm SiGe BiCMOS (SBC13) process that promises to enable the design of the highest-performance circuits in advanced high-speed optical, wireless, and millimeter-wave applications. This process combines industry-standard 130-nm CMOS with 200-GHz HBT npn transistors. The technology also includes advanced analog components (inductors, capacitors, and resistors) with high-density digital circuitry to provide scaling of both the analog and digital blocks in an SoC approach.

SBC13 uses a 1.2/3.3-V dual gate oxide process to form the base CMOS, with the addition of SiGe transistors Ft, Fmax, and BVceo for design flexibility, with an Ft up to 200 GHz and a separate higher-voltage transistor. The process also supports up to six layers of aluminum metal, a 5.6-fF/µm2 linear MIM capacitor, a triple-well module, n-well resistor, MOS varactor, and a low- and high-value unsilicided poly resistor.

The top metal is 3-µm-thick aluminum to support high-Q inductors. The technology is offered through the company’s integrated design environment supporting the latest EDA tools for RF, analog, and mixed-signal products. The SBC13 process is available for prototyping through a Multi-Project Wafer (MPW) Program offering 5 x 5-mm tiles. For additional information, call Melinda Jarrell at 949-435-8181 or e-mail melinda.jarrell@jazzsemi.com.

Christina Nickolas