The MMZ09332B two stage, high linearity InGaP heterojunction bipolar transistor (HBT) broadband amplifier is designed for wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA with an ACPR (adjacent channel power ratio) of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1,000 MHz.
The amp has adjustable active bias control, operates from a 3 to 5 V supply, and offers excellent reliability, ruggedness, and temperature stability in a 12-pin 3 x 3 mm QFN package. At 748 MHz and 140 ma quiescent supply current, the device provides 23 dBm out with 30.9 dB gain. Loaded supply current is 315 ma. From $3.94 ea./1,000.
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