30-V power MOSFET has 2.25-mΩ on-resistance
The TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK SO-8 package, features a maximum on-resistance of 2.25
mΩ at a 4.5-V gate drive voltage. On-resistance times gate charge, a figure of merit (FOM) for MOSFETs in dc/dc converter
applications, is 98 mΩ-nC for a VDS = 30 V, VGS = 20 V device in an SO-8 package.
The device will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and
ORing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for
voltage regulator modules, servers, and systems using POL power conversion. ($0.85 ea/100,000 — samples available now.)
Vishay Intertechnology , Malvern , PA
Information 619-336-0860
Advertisement
Learn more about Vishay Intertechnology
