32-Gb DDR5 DRAM delivers capacity for AI

AI adoption often demands that greater performance be available across a myriad of industries and segments. This is also seen in the need for high-performance memory and data centers. To address these growing requirements, Samsung Electronics has claimed the industry’s first and highest-capacity 32-Gb DDR5 DRAM using 12-nanometer (nm) process technology.

(Source: Samsung Electronics)

The DRAM doubles the capacity of 16-Gb modules in a single chip, using the same package size, enabling the production of 128-GB DRAM modules while eliminating the through silicon via (TSV) process and decreasing power consumption by 10%.

Samsung explained that DDR5 128-GB DRAM modules using the 16-Gb DRAM required the TSV process. By moving to 32-Gb DRAM, the 128-GB module can be manufactured without this process, resulting in lower power consumption.

This latest announcement falls on the heels of Samsung announcing mass production of its 12-nm 16-Gb DDR5 DRAM in May 2023 that reduced power consumption by up to 23% while enhancing wafer productivity by up to 20%. Samsung’s 12-nm DDR5 DRAM lineup will support applications such as data centers, artificial intelligence (AI) and next-generation computing.

Now, Samsung claims that the 12-nm 32-Gb DRAM will enable DRAM modules of up to 1-terabyte (TB), providing the high-capacity DRAM necessary for AI and big data.

Mass production of the new 12-nm 32-Gb DDR5 DRAM is scheduled to begin by the end of 2023.