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3G CMOS RF amps improve device reliability

Offered as the first of its kind, the BST34 and BST35 3G CMOS RF power amplifier product lines are claimed to improve the reliability and data throughput of mobile phones, tablets, and datacards. The BST34 series of power amplifiers has been designed as a drop-in replacement for existing 3G GaAs RF PAs and, as such, are fully function and pin-compatible.

3G CMOS RF amps improve device reliability

The BST35 series, with its TruePower high-performance power detector, improves total radiated power performance by up to 2 dB, reducing the incidence of dropped calls and increasing the data rates in real-world operating environments. The BST34 series includes an integrated directional coupler with daisy-chain support and integrated overvoltage and overtemperature protection circuitry, while the BST35 products are robust to 100:1 VSWR, 10 times that of GaAs power amplifiers. Both devices are packaged in a 3 x 3-mm 10-pin form factor. (Contact company for pricing and availability.)

Black Sand Technologies , Austin , TX
Jim Nohrden

www.blacksand.com

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