40-V power MOSFETs deliver high power density

Nexperia has introduced new 0.55 mΩ R_DS(on), 40-V power MOSFETs in the high-reliability LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. These devices are the lowest R_DS(on) 40-V parts that Nexperia has produced.

Nexperia claims these devices offer power densities more than 50× greater than traditional D2PAK devices as well as improved performance in both Avalanche and Linear mode for higher reliability and increased ruggedness. The company attributes the performance increases to a combination of the latest high performance superjunction silicon technology with its LFPAK copper clip technology, which enables them to use more silicon in the package.

The power MOSFETs, measuring 8 × 8 × 1.7 mm, claim class-leading linear mode/safe operating area (SOA) characteristics for safe and reliable switching at high current conditions. SOA at 1 ms, 20 VDS operating conditions is 35 A due to a combination of silicon and package, said Nexperia, while at 10 ms, 20 VDS  SOA is 17 A.

Nexperia said these figures are 1.5 – 2× better than the competition and offer the best single pulse avalanche rating (EAS) at 2.3 J and very strong ID current rating of 500 A, which is a measured rather than theoretical limit.

Together, these performance and size advantages enable designers to replace two paralleled old-style components with one new LFPAK88. The AEC-Q101-qualified BUK7S0R5-40H parts target automotive applications including braking, power steering, reverse battery protection, e-fuse, DC/DC converter, and motor control applications. The industrial PSMNR55-40SSH MOSFETs suit battery isolation, current limitation, e-fuse, motor control, synchronous rectification and load switch applications in power tools, appliances, fans; and e-bikes, scooters and wheelchairs.