The 30-W CGHV40030 and 100-W CGHV40100 unmatched 50-V gallium nitride (GaN) high electron mobility transistors (HEMTs) suit high power broadband amplifier, CW, and pulsed applications. They improve the efficiency and bandwidth capabilities of multi-octave to instantaneous bandwidth amplifiers and a wide range of L- and S-Band products. They are available in a two-leaded flange or pill package.
The CGHV40030 transistor features up to 6-GHz operation, 16-dB gain at 1.2 Hz, and a 0.96 to 1.4 GHz broadband reference design. It suits a variety of L-, S-, and C-Band amplifier applications. The CGHV40100 transistor targets linear and compressed amplifier circuits offering a general purpose, broadband solution for a variety of RF and microwave applications. It features 3GHz operation, 18 dB small signal gain at 2.0 GHz, and a 0.5 to 2.5 GHz broadband reference design. The 100 W GaN transistor also demonstrates 55% efficiency at PSAT .
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