The MIXD600PF650TSF IGBT module features a 600 A and 650 V capability and is designed.for parallel operation in high power modules. The reverse bias safe operating area is 1,200 A. The short-circuit rating of these modules gives flexibility to use them in demanding applications. The self-limits of the short circuit current is 2,400 A for 10 μs.
The IGBT module features a 17-mm height and an isolated copper baseplate for optimal thermal conditions. The maximum junction temperature is 175°C with a constant operation maximum temperature of 150°C. The device suits high power control applications such as UPS, battery chargers, inverters, solar inverters, motor drives, electrical vehicles, elevators and other industrial applications.
Learn more about IXYS