600-V GaN FET and driver doubles power density at half the loss

The LMG3410 70-mΩ, 600-V GaN FET power-stage is the first high-voltage driver-integrated GaN solution. The power stage delivers 50% lower power losses in a totem-pole PFC compared with state-of-the-art silicon, FET-based boost power-factor converters. These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing and renewable energy applications.

With its integrated driver and features such as zero reverse-recovery current, the GaN FET provides reliable performance, especially in hard-switching applications where it can reduce switching losses by as much as 80 percent. Unlike stand-alone GaN FETs, the LMG3410 integrates built-in intelligence for temperature, current and undervoltage lockout (UVLO) fault protection. The 8 x 8-mm quad flat no-lead (QFN) package decreases power loss, component voltage stress and electromagnetic interference (EMI) compared to discrete GaN solutions. You can join the TI E2E Community Gallium Nitride (GaN) Solutions forum to find solutions and read the blog post, Let’s GaN together, reliably