600-V MOSFET offers 160-mΩ RDS(on)

600-V MOSFET offers 160-mΩ RDS(on)

The AOTF27S60 600-V MOSFET is based on a proprietary αMOS (alpha-MOS) technology platform. It is the first product in this platform, and suits high-voltage primary-side applications. At 160 mΩ max, this device reduces RDS(on) by a factor of 3.5 compared to its planar 600-V MOSFETs.

The alpha-MOS MOSFET features a 3.64 Ω-nC gate charge figure of merit (FoM) that improves on its planar-type MOSFET’s FoM by a factor of 5.7. It also has a gate-to-drain charge (Qgd ) FoM of 1.23 Ω-nC. The device is implemented on 200-mm wafers and is available in TO-220, TO-220F, TO-262, TO-262F, and D2 PAK packages. ($3.60 ea/1,000 — available now.)

By Paul O’Shea

Alpha & Omega Semiconductor , Sunnyvale , CA
information 408-830-9742
http://www.aosmd.com