64-Mbit flash memory has 100-Kcycle endurance

The SST38VF6401B is a 64-Mbit parallel flash memory device is made with a split-gate cell design and thick-oxide tunneling injector for better reliability and manufacturability. The chips random read access time is 70 ns, and page read access time is 25 ns. Erasing sectors and blocks take as little as 18 ms, erasing the entire chip — 40 ms. It provides 100,000 cycle endurance.

The 4 M x 16 CMOS advanced multipurpose flash plus (Advanced MPF+) device is partitioned into uniform 32-Kword and nonuniform 8-Kword blocks, and has a 128-bit unique ID block. The device takes 5 µA in standby and 25 mA active, and starts at $2.50 ea/10,000.