650-V CoolSiC MOSFET available in TOLL package

Infineon Technologies Inc. has introduced its 650-V CoolSiC MOSFET in TO leadless (TOLL) packaging, which is designed to optimize performance and reliability for a variety of applications, including those in harsh environments. Applications include SMPS for servers, telecom infrastructure, energy storage systems and battery formation solutions.

The new family’s JEDEC-qualified TOLL package features a low parasitic inductance for higher switching frequency, reduced switching losses and good thermal management. In addition, the compact form factor enables efficient use of the board space, enabling system designers to achieve greater power density.

650-V CoolSiC MOSFET in a TOLL package (Source: Infineon Technologies AG)

A key feature of the new device is the inclusion of the innovative .XT interconnect technology to enhance thermal performance by reducing the thermal resistance (R_th) and thermal impedance (Z_th). Other features include a gate threshold voltage (V_GS(th)) greater than 4 V for robustness against parasitic turn-on and a robust body diode.

Infineon also reported that the SiC-based MOSFET offers the “strongest” gate oxide (GOX), resulting in extremely low failures in time (FIT) rates, high reliability and low losses.

The new portfolio supports a wide driving interval of V_GS voltage within the range of -5 V (turn off) to 23 V (turn on), ensuring ease-of-use and compatibility with other SiC MOSFETs and standard MOSFET gate-driver ICs. This results in reduced system complexity, enabling automated assembly and reducing system and production costs.

The 650-V CoolSiC MOSFET in TOLL industrial-grade discretes are available for order in a variety of drain-source on-resistance (R_DS(on)) options from 22 to 83 mΩ.  The 107 mΩ, 163 mΩ and 260 mΩ versions will be available on-demand.