650-V SiC diode reduces system complexity

Nexperia has launched a new 650-V silicon-carbide (SiC) Schottky diode for power applications that require ultra-high performance, low loss and high efficiency. The industrial-grade 10-A PSC1065K SiC diode targets demanding high voltage and high current applications. These include switched-mode power supplies, AC/DC and DC/DC converters, battery-charging infrastructure, uninterruptible power supplies and photovoltaic inverters.

Nexperia said data centers, equipped with power supplies using its PSC1065K SiC Schottky diode, will better meet rigorous energy-efficiency standards than those using solely silicon-based solutions.

(Source: Nexperia)

The PSC1065K features temperature-independent capacitive switching and zero recovery behavior, resulting in an outstanding figure-of-merit (QC x VF), said Nexperia, and its high switching performance is almost entirely independent of current and switching speed variations.

Thanks to the merged PiN Schottky (MPS) structure, the PSC1065K offers additional benefits, including high robustness against surge currents that eliminates the need for additional protection circuitry. (Click here for the data sheet.)

“These features significantly reduce system complexity and enable hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications,” said Nexperia.

The SiC Schottky diode is encapsulated in a real-2-pin (R2P) TO-220-2 through-hole power plastic package. Other package options include the surface-mount DPAK R2P and D2PAK R2P and through-hole TO-247-2 with a real-2-pin configuration that enhances reliability in high-voltage applications at temperatures up to 175°C.

Nexperia will continue to expand its portfolio of SiC diodes with automotive-grade parts that operate at 650 V and 1200 V with currents in the 6-20 A range. Samples and production quantities of the PSC1065K SiC diode are available now.