650-V trench IGBTs feature 30 to 200-A ratings

The 650-V XPT trench IGBTs feature current ratings from 30 to 200 A at 110°C. On-stage voltages are as low as 1.7 V and minimize conduction and switching losses, especially in hard-switching applications. The IGBTs are optimized for switching speed ranges up to 60 kHz. These IGBTs are available in TO-247, TO-264, SOT-227B, PLUS247, ISOPLUS247 international standard packages. Some part numbers are the IXXH30N65B4, IXXN110N65C4H1, IXXK160N65C4, and IXXX200N65B4, with collector current ratings of 65, 234, 290, and 370 A, respectively.

The IGBTs are developed using thin wafer technology and fourth generation vertical IGBT process. They are suited for power conversion applications, lighting control, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, and uninterruptible power supplies. The IGBTs have square reverse bias safe operating areas (RBSOA) up to the breakdown voltage of 650 V, making them suitable for snubberless hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges.