700-V and 1200-V SiC Schottky barrier diodes target EVs

Microchip Technology Inc. has released AEC-Q101-qualified 700-V and 1200-V SiC Schottky barrier diodes (SBDs), aimed at electric vehicle (EV) applications that require power devices across a wide range of voltage, current, and package options.

The SBD devices maximize system reliability and ruggedness and enable stable and lasting application life, said Microchip. Through internal and third-party testing, critical reliability metrics have shown that Microchip’s SiC devices do not degrade under extreme conditions.

Microchip’s SiC SBD ruggedness testing demonstrates 20 percent higher energy withstand in unclamped inductive switching (UIS), and shows that these devices are among the lowest leakage currents at elevated temperatures, which increases system life and enables a more reliable operation.

The SBDs also claim superior avalanche performance, which reduces the requirements for external protection circuits. This results in lower system cost and complexity, said the company.

Microchip’s SiC automotive power devices can be paired with the company’s portfolio of controllers, as well as its analog and connectivity solutions to deliver a total systems solution for electric vehicles and charging stations. The company also provides a portfolio of 700-V, 1200-V and 1700-V SiC SBD and MOSFET power modules that use its newest generation of SiC die.

The automotive SiC SBD devices are supported with SPICE and PLECS simulation models and the MPLAB Mindi Analog Simulator. Also available is a PLECS reference design model that uses Microchip’s SBDs (1200V, 50A) as part of the power stage — the Vienna 3-phase power factor correction (PFC) reference design.

The SBDs for automotive applications are available in volume production. They are also available as die for power modules.

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