The IX2113 high- and low-side gate-driver IC that can drive MOSFETs and IGBTs that operate up to 600 V. Both the high side and low side outputs feature integrated power DMOS transistors, each capable of sourcing and sinking over 2 A of gate drive current. It has high-voltage level shift circuitry that allows low voltage logic signals to drive n-channel power MOSFETs and IGBTs in a high side configuration operating up to 600 V. The driver’s 700-V absolute maximum rating provides additional margin for high voltage applications.
The gate driver is manufactured on an advanced HVIC silicon on Insulator process. The inputs are 3.3- and 5-V logic compatible. The driver features internal under voltage lockout circuitry for both the high- and low-side outputs and does not allow the device to turn-on the discrete power transistors until there is sufficient gate voltage. The logic supply requires less than 1 uA. The IC can drive power discrete MOSFETs and IGBTs in half-bridge, full-bridge, and 3-phase configurations. Typical applications include motor drives, high voltage inverters, UPSs, and dc/dc converters.
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