750-W GaN on SiC RF power transistor suits aviation applications

The MDSGN-750ELMV 750-W RF transistor is part of a family of RF power transistors based on GaN high electron mobility transistor (HEMT) on SiC technology. The HEMT RF transistor targets air traffic control and collision avoidance equipment, and commercial secondary surveillance radar (SSR), which is used globally to interrogate and identify aircrafts.

The RF transistor delivers 750-W – peak power with 17-dB of power gain and typical 70% drain efficiency when operating at 1,030/1,090 MHz. The device handles the commercial Mode-S ELM (extended length message) pulsing conditions for both the 1,030-MHz ground-based interrogators and 1,090-MHz airborne transponders.