STMicroelectronics Launches 2-Bit-per-Cell 256-Mbit NOR Flash Memory for 3G Mobile Phone Market
STMicroelectronics (NYSE: STM), one of the world's largest suppliers of NOR Flash devices across a broad range of applications, today announced a 256-Mbit NOR Flash memory chip that uses a well-established 2-bit/cell architecture to provide increased memory density in a small-sized die. ST's M30L0R8000x0 is the first of a series of 2-bit/cell devices that also includes a 128-Mbit IC, with a 512-Mbit chip currently in development.
Compact multi-bit cell, high density device supports advanced features in the latest generation cell phones
Specifically designed for high-performance code execution and data storage, the 256-Mbit Flash memory is intended particularly for the third-generation (3G) mobile phone market, where increasingly sophisticated applications and multi-function capability are demanding large amounts of memory in a small physical footprint. Two-bit/cell technology effectively allows the capacity of the silicon memory array to be doubled, leading to a significant reduction in the die size and the package.
The M30L0R8000x0 is produced using ST's state-of-the-art 0.13-micron process technology, and uses a compact 'chip-scale' 8x10mm TFBGA (Thin, Fine-Pitch Ball Grid Array) package. It is intended for operation on a 1.8V power supply (and also available with 3V I/O) for low power consumption and compatibility with the latest mobile-phone designs.
Advertisement
