TOSHIBA EXPANDS Ku-BAND GaAs FET LINE FOR VSAT SATELLITE COMMUNICATIONS
Continuing its leadership position in offering high power microwave devices, Toshiba America Electronic Components, Inc. (TAEC)* today announced the addition of two internally-matched Ku-Band power gallium arsenide field effect transistors (GaAs FETs) that provide increased linearity and higher output power for applications in satellite communications. Developed by Toshiba Corp. (Toshiba) the new GaAs FETs was showcased at the 2005 IEEE MTT-S International Microwave Symposium, in Long Beach, California.
30W GaAs FET achieves highest power output for Ku-Band SSPA applications; 9W device improves power efficiency and can be used as drop-in replacement for lower power GaAs FETs
Developed by Toshiba Corp. (Toshiba) the new GaAs FETs will be showcased, along with other Toshiba microwave products, in TAEC's booth, #1260, at this year's IEEE MTT-S International Microwave Symposium, held June 14 through 16 in Long Beach, California. The 9 watt (W) Toshiba TIM1414-9L features high power output of 39.5 decibels relative to 1 milliwatt (dBm) at a frequency range of 14.0 to 14.5 gigahertz (GHz).
The TIM1414-9L is ideal for use in Block Upconverter modules in Ku-Band transceivers for Very Small Aperture Terminals (VSAT). The device is offered in the 9.7mm x 17.0mm package used for Toshiba's 2W, 4W and 7W Ku-Band GaAs FETs, enabling the TIM1414-9L to be used as a drop-in replacement for these lower-power devices to increase power output in existing designs.
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