AMI Semiconductor Announces Automotive Grade Embedded Flash Technology for up to 64kBytes of Code Storage in Smart Power, Mixed-Signal System-on-Chip Designs-

AMI Semiconductor Announces Automotive Grade Embedded Flash Technology for up to 64kBytes of Code Storage in Smart Power, Mixed-Signal System-on-Chip Designs-

AMI Semiconductor (NASDAQ: AMIS), a designer and manufacturer of state-of-the-art integrated mixed-signal and structured digital products, has announced the availability of automotive grade embedded Flash memory for its 0.35μm ‘Smart Power’ high-voltage mixed-signal system-on-chip (SoC) process technology. The combination of the proven CMOS mixed-signal technology and the robust new non-volatile memory (NVM) allows designers to create cost-effective smart sensor interfaces, intelligent actuators and other sophisticated single-chip devices for operation in automotive, industrial, appliance and other harsh environment applications.

Latest HiMOS® Non-Volatile Memory Provides Flexible Flash Option for Smart Sensor Interfaces and Intelligent Actuator ICs Operating in Temperatures to 150ºC

AMI Semiconductor’s latest High Injection MOS (HiMOS) embedded memory IP and technology provide designers with the flexibility to configure the size of the on-board Flash memory capacity from 2Kbytes to 64Kbytes in target applications expected to operate in harsh conditions. Memory can be delivered in single-bank or dual-bank configurations with memory retention for code storage of up to 15 years.

Single-bank configurations can provide up to 64kBytes of code storage. The dual-bank option allows code storage up to 62kBytes and data storage of 2kBytes, emulating an EEPROM capable of a minimum of 10,000 erase cycles. In addition to providing Flash functionality in the final product, HiMOS NVM can also be used for rapid development and prototyping, prior to shrinking to a ROM-based solution for final manufacture.