The TPCA8A02-H and the TPC8A03-H MOSBD devices integrate a power MOSFET and a Schottky barrier diode onto a single die. They are well suited for high-efficiency dc/dc converter applications in notebook PCs and portable devices. Compared to discrete devices, each saves board space, increases power efficiency, and reduces wiring resistance and inductance by eliminating external wiring between the MOSFET and the diode.
The TPCA8A02-H features a drain-source voltage of 30 V, drain current of 34 A, RDS(on) of 4.8 mΩ, and low-profile SOP packaging. The TPC8A03-H has a drain-source voltage of 30 V, drain current of 15 A, RDS(on) of 5.1 mΩ, and SOP-8 packaging. (TPCA8A02-H, $0.55; TPC8A03-H, $0.50 — samples available now.)
Toshiba America Electronic Components , Irvine , CA
Sales 949-623-2900
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