Innovative Si power transistors target pulsed RF

Innovative Si power transistors target pulsed RF

Devices boost power output and frequency performance while reducing power consumption in radar and avionics designs

Based on high-frequency high-voltage vertical field-effect transistors (HVVFETs), the HVV1011-300, HVV1214-025, and HVV1214-100 power transistors deliver frequency bandwidth, voltage level, and power level for radar and avionic applications that exceed bipolar and LDMOS capabilities. Targeted at pulsed RF applications in the L-band, the three devices deliver high output power and high gain.

For pulsed applications in the L-band from 1,030 to 1,090 MHz, the HVV1011-300 operates at 48 V, and delivers over 300 W of pulsed output power while providing 15 dB of gain and 48% efficiency under pulsed signal conditions with a pulse width of 50 µs and a pulse period of 1 ms. It withstands a 20:1 VSWR at all phase angles under full rated output power.

The HVV1214-025 and HVV1214-100 transistors are for L-band pulsed radar applications in the 1.2 to 1.4-Hz frequency range. Both devices operate from a 48-V supply and produce 25 and 100 W, respectively. Under test conditions that generate a pulse width of 200 µs and a pulse duty cycle of 10%, the HVV1214-025 offers 17.5 dB and the HVV1214-100 offers 19.5 dB of gain. Both transistors can withstand an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the entire frequency band of operation. (Ea/24: HVV1214-025: $135.69; HVV1214-100: $226.15; HVV1011-300: $398.31 evaluation kits available now, prod qty 3rd qtr.)

HVVi Semiconductors , Phoenix , AZ
Information 480-776-3848
http://www.hvvi.com