MOSFET improves converter efficiency

The RJK0383DPA dual-type power MOSFET enables smaller, higher-efficiency synchronous-rectification dc/dc converters for generating various supply voltages in communication devices and laptop PCs. The device integrates high-side and low-side power MOSFETs and a Schottky barrier diode in a 5.3 x 6.2 x 0.8-mm package. It achieves an efficiency rating of 91.6% in a synchronous-rectification circuit that converts a 12-Vdc input to a 1.1-Vdc output at 600 kHz.

The high-side power MOSFET has a drain-gate load of 1.5 nC. The low-side power MOSFET has an on-resistance of 3.7 mΩ. The device integrates a Schottky barrier diode that is connected via low-inductance wiring to the low-side power MOSFET. ($0.89 available 4th qtr.)

Renesas Technology America , San Jose , CA
Akiko Ishiyama 408-382-7407

http://www.renesas.com