Power transistors target DME apps

Based on high-voltage vertical-field-effect transistor (HVVFET) architecture, the HVV1012-060, HVV1012-100 and HVV1012-250 RF transistors target airborne distance-measuring equipment (DME) applications operating in the 1,025 to 1,150-MHz frequency L band.

The HVV1012-060 RF transistor is designed for 48-V operation and delivers over 60-W pulsed output power. It delivers 23-dB gain. The HVV1012-100 also operates from 48 V and delivers 100-W pulsed output power and offers a power gain of 20.5 dB. The HVV1012-250 delivers over 250-W pulsed output power and a gain of 20 dB. (ea/1 to 24; HVV1012-060, $199.01; HVV1012-100, $226.15; HVV1012-250, $398.31 available now.)

HVVi Semiconductors , Phoenix , AZ
Information 480-776-3848
http://www.hvvi.com