Toshiba Adds 40V, 60V and 80V MOSFETs for Isolated Dc-dc Bus Converters Using Sixth Generation High Speed Proc

Toshiba Adds 40V, 60V and 80V MOSFETs for Isolated Dc-dc Bus Converters Using Sixth Generation High Speed Process for High Power Efficiency

Higher Power UMOS VI-H MOSFETs for use in the Primary Side Switch of Isolated DC-DC Bus Converters Achieve High Power Efficiency Through Lower On-state Resistance and Reduced Gate Charge

IRVINE, Calif., February 25, 2009 — Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, has expanded its lineup of MOSFETs with a selection of higher power 40V, 60V and 80V devices well suited for use in the primary side switch of an isolated DC-DC bus converter in mobile communications applications. These N-Channel devices can also be used in non-isolated DC-DC converters.

Developed by Toshiba Corp., the seven new MOSFETs feature fast switching, enabled through lower gate charge (QSW) and lower gate resistance (Rg ). The new MOSFETs are offered in SOP Advance packages with Aluminum Strap (Al-Strap) connections instead of conventional wire bonding technology to further reduce RDS(ON) .

“The new devices expand the range of applications addressed by Toshiba’s lineup of UMOS VI-H MOSFETs, which use the latest (sixth) generation trench process in the Toshiba fast switching series. This process enables a significant reduction in gate switch charge and on-state resistance (RDS(ON) ) compared to previous Toshiba devices, resulting in greater power efficiency,” said Jeff Lo, business development manager, Discrete Power Devices, for TAEC.

The three 40V MOSFETs: TPCA8045-H, TPCA8046-H and TPCA8047-H, feature drain current of 46 Amps (A), 38A and 32A respectively, and a range of RDS(ON) , capacitance and gate charge values, shown in the table below, to meet various load current requirements.

The three 60V devices: TPCA8048-H, TPCA8049-H and TPCA8050-H feature drain current of 35A, 28A and 24A respectively, and also provide a range of RDS(ON) , capacitance and gate charge values, shown in the table below, to meet various load current requirements.

The seventh device in the expanded lineup, TPCA8051-H, is an 80V MOSFET with drain current of 28A, RDS(ON) (typ.) of 6.0 mΩ.

Specifications for Toshiba 40V, 60V and 80V UMOS VI-H Single N-Ch MOSFETs for DC-DC Converters

Product Number VDSS (V) ID

(A) RDS(on) (mΩ) Crss

(pF)

(Typ.)

Ciss (pF)

(Typ.)

Rg

(Ω)

Qg

(Typ.) Package

(Typ.) . (Max.)

@VGS = 4.5V @VGS = 10.0V @VGS= 4.5V @VGS = 10.0V VDS =10V, VGS =0V, f=1MHz @VGS =10 V

TPCA8045-H 40 46 2.9 2.4 4.1 3.6 305 5800 1.0 90 nC

(VDD =32 V, ID=46 A)

SOP Advance

5.0mm x 6.0mm x 0.95mm

TPCA8046-H 40 38 4.4 3.5 6.3 5.4 185 3545 1.0 55 nC

(VDD =32 V, ID=38 A)

TPCA8047-H 40 32 6.0 4.8 8.5 7.3 135 2590 1.0 43 nC

(VDD = 32 V, ID=32 A)

TPCA8048-H

60 35 4.8 4.3 7.1 6.6 210 5800 1.0 90 nC

(VDD = 48 V, ID=35 A)

TPCA8049-H 60 28 7.4 6.6 11.2 10.4 130 3545 1.0 55 nC

( VDD = 48 V, ID= 28 A)

TPCA8050-H 60 24 10.1 9.0 15.3 14.2 95 2590 1.0 41 nC

( VDD = 48 V, ID= 24 A)

TPCA8051-H 80 28 6.4 6.0 9.8 9.4 150 5800 1.0 91 nC

( VDD = 64 V, ID= 28 A)

Pricing and Availability

Samples of the seven new Toshiba UMOS VI-H DC-DC converter MOSFETs are available now, with prices in sample quantities starting at $0.80.

Toshiba’s Discrete Products

Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: “2007 Worldwide Semiconductor Market Share Report,” Gartner, released April 2008). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, photocouplers, TOSLINKs, LEDs, small signal diodes and transistors. The company’s discrete devices are designed to meet the growing demand for high-performance and lower voltages in today’s wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.

*About TAEC and Toshiba Corp.

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today’s leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor manufacturer and the world’s third largest semiconductor manufacturer (Gartner, Preliminary 2008 WW Semiconductor Revenue, Dec. 2008). For additional company and product information, please visit http://www.toshiba.com/taec/ .