The Si8422DB TrenchFET power MOSFET in the chip-scale microfoot package is optimized for power amplifier, battery, and load switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The 2-mil backside coating of the device insulates the top of package to prevent electrical shorts from being created by temporary contact with moving parts in portable devices.
The 20-V n-channel MOSFET features a 1.55 x 1.55-mm footprint with a 0.64-mm profile. The device offers a low on-resistance range from 0.043 Ω at 1.8-VGS to 0.037 at 4.5-VGS , with a maximum gate-source voltage of ±18 V.( $0.20 ea/100,000 — available now.)
Vishay Intertechnology , Malvern , PA
Information 619-336-0860
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