Doherty ref design suits RF base stations

Based on the Gen 7 LDMOS BLF7G22L-130 transistor, the three-way Doherty amplifier will enable a new standard of energy efficient RF base stations. The Doherty circuit performs at efficiency levels in excess of 47%, at an average power output of 48 dBm, a gain of 15 dB, and peak-to-average ratio of 8 dB for a multicarrier W-CDMA signal. The current design covers the W-CDMA standard for band I operation. (Call company for pricing — samples available now.)

NXP Semiconductors , Eindhoven , The Netherlands
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http://www.nxp.com/experience_rfpower/