RF power transistors are based on LDMOS

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements that make them easy to integrate into amplifiers. The MRFE6S9046N operates from 920 to 960 MHz and delivers a 17.8 W average RF power output with 19 dB of gain, up to 42.5% efficiency and EVM of up to 2.1% rms. It is housed in overmolded plastic package.

The MRF8S9100H/HS (920 to 960 MHz) and MRF8S18120H/HS (1,805 to 1,880 MHz) are 28-V devices suited for Class AB and Class C operation in GSM and EDGE systems. The MRF8S9100H/HS delivers 45-W average power gain of 19.1 dB and efficiency of 44% at 940 MHz. The MRF8S18120H/HS delivers 46-W average power gain of 18.2 dB, efficiency of 42% at 1840 MHz. They are housed in air-cavity ceramic packages. (Call 800-521-6274 for pricing and availability.)

Freescale Semiconductor , Austin , TX
Sales 800-521-6274
http://www.freescale.com