SiC JFETs target solar inverters

The SJEP120R100, SJEP120R063, and SJEP170R550 normally off vertical trench SiC power JFETs are compatible with standard gate-drive circuitry and feature a positive temperature coefficient for ease of paralleling. They target solar inverters, power conversion, uninterruptible power supplies and high temperature, harsh environments.

The voltage-controlled JFETs handle up to 50-kW power. The SJEP120R100 has an RDS(on) of 100 mΩ and a maximum operating temperature of 175°C, and the SJEP120R063 features an RDS(on) of 63 mΩ and can enable switching losses of 353 µJ at 24 A. Both devices offer a blocking voltage of 1,200 V and exhibit temperature-independent switching behavior. The 4-A SJEP170R550 SiC JFET delivers 1,700-V blocking voltage, 550-mΩ on-resistance, 20-pF output capacitance and a 10-nC gate charge. It targets flyback power supply applications. (Ea/1,000: SJEP120R100, $12.55; SJEP120R063, $22.87; SJEP1270R550, $9.06 — available now.)

By Paul O’Shea

SemiSouth Laboratories , Starkville , MS
Information 662-324-7607
http://www.semisouth.com