The SiR640DP 40-V and SiR662DP 60-V n-channel TrenchFET power MOSFETs provide the industry’s lowest RDS(on) and on-resistance times gate charge figures of merit for devices with these voltage ratings in the SO-8 or PowerPAK SO-8 packages. The 60-V device offers on-resistance of 2.7 mΩ at 10 V and 3.5 mΩ at 4.5 V and an FOM of 172.8 mΩ-nC at 10 V and 105 mΩ-nC at 4.5 V. The 40-V unit offers on-resistance of 1.7 mΩ at 10 V and 2.2 mΩ at 4.5 V and an FOM of 128 mΩ-nC at 10 V and 76 mΩ-nC at 4.5 V.
The power MOSFETs suit secondary-side synchronous rectification in dc/dc and ac/dc converters, primary-side switching in dc/dc converters, PoL modules, motor drives, bridge inverters, and mechanical relay replacement applications. Typical end products are telecom power supplies, industrial automation and professional gaming systems, uninterruptible power supplies, and consumer applications. (From $0.78 ea/10,000 available now.)
By Paul O’Shea
Vishay Siliconix , Santa Clara , CA
Information 619-336-0860
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