Silicon carbide JFETs target high-end audio

SJEP120R100A and SJEP120R063A silicon carbide (SiC) JFETs provide 15% lower cost, high linearity, and low distortion in high-end audio applications. The devices devices are compatible with standard gate-driver ICs and feature a positive temperature coefficient for ease of paralleling; extremely fast switching with no tail current at up to a maximum operating temperature of 150°C; and a low RDS(on) max of 0.100 and 0.063 Ω, respectively.

Devices are available in TO-247 packages and the 100-mΩ part is also available in die form for integration into modules. (Contact company for price and availability.)

By Carolyn Mathas

SemiSouth Laboratories , Starkville , MS
Information 662-324-7607
www.semisouth.com