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Second gen eGaN FET features 40 V, 16 mΩ

Second gen eGaN FET features 40 V, 16 mΩ

The EPC2014 eGaN FET is lead free, RoHS-compliant and halogen free. It is a 1.87 mm2 , 40-VDS, 10−A device with a maximum RDS(ON) of 16 mΩ with 5 V applied to the gate. The eGaN FET has a maximum junction temperature rating to 150C and is fully enhanced at a lower gate voltage than the predecessor EPC1014.

Second gen eGaN FET features 40 V, 16 mΩ

The eGaN FET is smaller and has superior switching performance than a silicon power MOSFET with similar on-resistance. Applications that benefit from eGaN FET performance include high-speed dc/dc power supplies, point-of-load converters, Class D audio amplifiers, hard-switched and high-frequency circuits. ($1.12 ea/1,000 available now.)

By Paul O’Shea

Efficient Power Conversion , El Segundo , CA
information 310-615-0279

www.epc-co.com

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