GaN MMIC power amplifier delivers 10 W

The HMC999 GaN HEMT MMIC distributed-power amplifier chip delivers 10 W of saturated output power in a chip area of only 7 mm2 (equating to a power density of 1.5 W/mm2 ) while operating between 0.01 and 10 GHz. This wideband device provides 11 dB of gain, 38 dBm of output power at 1 dB of gain compression, and 47-dBm output IP3 at midband.

For less-demanding applications, the part can be operated from a drain voltage as low as 28 V while still producing 5 W of saturated output power. When biased for maximum output power, the HMC999 consumes 1,100 mA of quiescent current from a 48-V supply, and achieves approximately 18% power-added efficiency at saturation. ($594.99 ea/10 — available now.)

By Christina Nickolas

Hittite Microwave , Chelmsford , MA
Sales 978-250-3343

www.hittite.com