RF power LDMOS transistor suits UHF television apps

RF power LDMOS transistor suits UHF television apps

The MRFE6VP8600H RF power LDMOS transistor provides significant benefits for television transmitter manufacturers and broadcasters. For example, the transistor delivers 125 W of linear power (more than 600 W peak envelope power) over the entire broadcast band, with efficiency of typically 30% at 860 MHz and up to 45% when employed in a Doherty configuration. The UHF frequency band ranges from 470 MHz to 860 MHz.

When driven to its full-rated RF output power, the part will not degrade in performance when driving an impedance mismatch (VSWR) greater than 65:1, at all phase angles, or when driven by twice its rated input power. In addition, integrated ESD protection provides resistance to stray voltages encountered during assembly. The part offers an extended negative gate-source voltage range of –6 to 10 V to improve performance when operated as the peaking stage of a Doherty amplifier. It is housed in NI-1230 bolt-down ceramic air cavity package (MRFE6VP8600H) or NI-1230S solder-attach ceramic air cavity package (MRFE6VP8600HS). (Contact company for pricing — available now.)

By Christina Nickolas

Freescale Semiconductor , Austin , TX
Information 800-521-6274
www.freescale.com