1,200-V MOSFETs suit alternative-energy apps
The UniSiC 1,200-V, 90-mΩ MOSFET in a TO262 package, meets the need for energy-efficient switching devices for power conversion applications in the alternative-energy, industrial, and consumer segments.
The MOSFETs can be switched as fast as a superjunction MOSFET, or as slow as an IGBT. The device is formed by stacking a low-voltage Si MOSFET atop a normally-on SiC JFET provided by SemiSouth. It features an RDS(on) of 1.8 Ω/nC, a forward voltage of 1.5 V at 10 A forward current, and a reverse-recovery charge (QRR ) of 151 nC. (Contact company for price and availability.)
By Paul O’Shea
Alpha & Omega Semiconductor , Sunnyvale , CA
information 408-830-9742
http://www.aosmd.com
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