Ultra-Fast I-V Applications for the Model 4225-PMU
Ultra-fast I-V sourcing and measurement have become increasingly important capabilities for many technologies, including compound semiconductors,
medium power devices, non-volatile memory, MEMs (micro-electro-mechanical devices), nanodevices, solar cells, and CMOS devices. Using pulsed I-V signals to
characterize devices rather than DC signals makes it possible to study or reduce the effects of self-heating (joule heating) or to minimize current drift or
degradation in measurements due to trapped charge. Transient I-V measurements allow scientists and engineers to capture ultra high speed
current or voltage waveforms in the time domain or to study dynamic test circuits. Pulsed sourcing can be used to stress test a device using an AC signal
during reliability cycling or in a multi-level waveform mode to program/erase memory devices. The Model 4225-PMU Ultra-Fast I-V Module for the Model
4200-SCS Semiconductor Characterization System supports many of these high speed source/measure applications.
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