Breakthrough enables 50-A SiC power devices

The industry’s first 50-A, 1,700-V Z-FET SiC MOSFET is part of a family of SiC MOSFETs that provide a breakthrough in performance and energy efficiency in high-power applications. These 50-A SiC devices include a 1,200-V Z-FET SiC MOSFET and three Z-Rec SiC Schottky diodes. They are available in die form, designed for high-power modules for applications such as solar power inverters, UPS equipment, and motor drives.

These 50-A SiC devices include a 40-mΩ 1,700-V MOSFET, a 25-mΩ 1,200-V MOSFET, and a 50-A/1,700-V, a 50-A/1,200-V, and a 50-A 650-V Schottky diode. Samples of all these high-power devices are available immediately. Preliminary datasheets are available upon request. (Production volumes targeted for Fall 2012.)

By Paul O’Shea

Cree , Durham , NC
Information 800-533-2583
www.cree.com