RF matched power transistor offers high gain

RF matched power transistor offers high gain

Targeting pulsed-radar applications, the RFHA1025 280-W pulsed gallium nitride (GaN) RF matched power transistor operates over a broad frequency range of 0.96 to 1.2 GHz and delivers a high gain of greater than 14 dB, and high peak efficiency of greater than 55%. Additionally, the part incorporates internal matching to simplify and shrink designers’ circuits.

Packaged in a hermetic, flanged ceramic package, the RFHA1025 leverages RFMD's advanced heat sink and power dissipation technologies, delivering excellent thermal stability and conductivity.(Contact company for pricing —samples and prod qty, now)

By Christina Nickolas

RF Micro Devices , Greensboro , NC
Information 336-664-1233
http://www.rfmd.com