40-V MOSFET features 1.1-mΩ DRS(on)

40-V MOSFET features 1.1-mΩ DRS(on)

The SQM200N04-1m1L 40-V n-channel TrenchFET power MOSFET is AEC-Q101 qualified and suits heavy-duty automotive applications.
The device features an on-resistance of 1.1 mΩ max at 10 V and 1.3 mΩ max at 4.5 V, allowing the device to minimize conduction
losses and operate at lower temperatures.

The 40-V power MOSFET offers a continuous drain current of 200 A. The device targets high-power automotive motor drive applications,
including electric power steering. The device is designed and 100% tested in production to withstand single-pulse avalanche
events of 100 A and 500 mJ. It also features low thermal resistance of 0.4°C/W (junction to case), and an operating temperature
range of −55° to +175°C. (From $1.25 ea/100,000 — available now.)

By Paul O’Shea

Vishay Intertechnology , Malvern , PA
Sales 402-563-6866

www.vishay.com