650-V IGBT reduces switching losses 60%

650-V IGBT reduces switching losses >60%

The TRENCHSTOP 5 thin-wafer IGBT (insulated gate bipolar transistor) features 10% lower conduction and 60% lower switching losses compared to currently leading solutions. The technology targets boost PFC (ac/dc) stage and high-voltage dc/dc topologies commonly found in photovoltaic inverters, uninterruptible power supplies, and inverterized welding machines

The TRENCHSTOP 5 technology provides the basis for the HighSpeed 5 (H5) soft, high-speed IGBT and the HighSpeed 5 FAST (F5), which features 98% system efficiency. The increase in efficiency allows for either lower junction temperatures during operation, and ensures higher lifetime reliability, or higher power density designs. Application tests have shown TRENCHSTOP 5 technology in a TO-220 package has a 15% lower case temperature than a H3 in a TO-247 package. Other improvements include a positive temperature coefficient of the saturation voltage and turn-off switching losses. The device features a temperature-stable forward voltage drop of the fast-recovery free-wheeling diode, and reverse recovery time of

By Paul O’Shea

Infineon Technologies , Milpitas , CA
Sales Office 866-951-9519
www.infineon.com