LM5113: 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs

The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs.