Highest-power GaN transistor offered in plastic

The first members in the series of GaN in plastic-packaged power transistors offer 15-, 50-, and 90-W devices for high-performance civilian and military radar and communications systems. The transistors are available in 3 x 6-mm DFN and standard small-outline-transistor (SOT-89) packages. They are capable of operating at frequencies up to 3.5 GHz.

The GaN-in-plastic transistors operate at 50-V lowering drain bias impedance matching circuits due to improved device parasitics. The 90-W power transistor demonstrates less than 115⁰C junction temperature (80⁰C base-plate) for a pulsed power output of 93 W, using a 1-ms pulse and 10% duty cycle. The devices can be mounted on PCBs via ground/thermal arrays. Internal stress buffers allow the devices to be reliably operated at up to 200⁰C channel temperature.