Crossbar has announced an upcoming Resistive RAM (RRAM) technology non-volatile memory product capable of storing up to one terabyte on a single 200 mm2 chip. The device is said to offer 20x the access speed of NAND flash with lower power consumption. The company expects to have product available in Q1 2014.
Crossbar RRAM technology has a switching mechanism based on formation of a filament in the silicon-based material when a voltage is applied between two electrodes.
Due to its simple three-layer structure, the device is said to able to be stacked in 3D, delivering multiple terabyte storage on a single chip. The memory is also said to offer operating temperatures to 125°C and 10k cycle longevity with-out the need for error correction algorithms.
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