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Galvanic isolation for IGBT-Driver

White paper topic: Galvanic isolation for IGBT-Driver

Usually, an IGBT (Insulated Gate Bipolar Transistor) is described in the following way: “An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor”. Although this sentence describes the basics very well, in the case of IGBT applications in the high power range, the complexity of the IGBT control circuit is in fact much higher than in the case of the control of a small MOSFET.

Via: Avago

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