Next-gen device MOSFET increases power density by 25%

The SiZ340DT is a 30-V asymmetric dual TrenchFET power MOSFET in the PowerPAIR 3 x 3-mm package. It features 57% lower on-resistance, up to 25% higher power density, and 5% higher efficiency than previous-generation devices. It saves space and simplifies the design of synchronous buck converters by combining a high-side and low-side MOSFET in one package.

The low-side MOSFET of the device offers an on-resistance of 5.1 mΩ at a 10-V gate drive and 7.0 mΩ at 4.5 V. The high-side features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V. The device is optimized for synchronous buck designs in cloud computing infrastructures, servers, telecommunication equipment, and various client-side electronic devices and mobile computing applications. The intended dc/dc blocks include system auxiliary power rails in servers, computers, notebook computers, graphic cards, gaming consoles, storage arrays, telecom equipment, dc/dc bricks, and PoL converters. It can also be used in dc/dc conversion circuitry that supplies power to FPGAs.